• News
    28 July 2020

    CHASM Launches Strategic Business Unit and Appoints Vice President

    CHASM Advanced Materials, Inc, inventor of AgeNT™ – the leading ITO alternative for transparent printed electronics – announced today the formation of a business unit dedicated to the company's printed electronics offerings and the appointment of Daniel Skiba as vice president to lead the organization. As part of the company's expanded executive management team, Skiba will report to CHASM's co-founder and CEO, David J. Arthur.

  • News
    07 July 2020

    EU funded project Maturolife holds month 30 review online

    The EU Horizon 2020 funded project Maturolife was due to hold its 30-month review in Paris (Hosted by Bertin Aubert Industries)

  • News
    02 July 2020

    Innovations in Greyscale Photoresists for 3D micro- and nanostructures

    Technology innovations in greyscale lithography are currently fueled by the need to manufacture three-dimensional structures at micro and nanometer scale.

  • News
    01 July 2020

    A-Gas EM sign EU trade open letter to the Prime Minister

    MANUFACTURERS AND ENTREPRENEURS URGE GOVERNMENT TO SECURE STRONG DEAL WITH EU

  • News
    30 June 2020

    A-Gas Named National Employer of the Year

    A-Gas has been named Employer of the Year at the Amazon Scale-Up Awards 2020!

  • News
    18 June 2020

    Chasm Advanced Materials - latest product information

    Chasm Advanced Materials showcase new video of their AgeNT-1 antenna.

  • News
    11 June 2020

    A-Gas EM signs distribution agreement with D J MicroLaminates

    A-Gas EM continues to expand its semiconductor portfolio by signing an exclusive agreement with D J MicroLaminates (based in Sudbury Massachusetts USA)

  • News
    11 June 2020

    A-Gas EM welcomes Foster Chemicals GmbH as a new supplier

    A-Gas EM has reached an agreement with Foster Chemicals GmbH to distribute its range of chemicals for pre-treatment of stainless steel.

  • News
    03 June 2020

    Optimizing Bi-layer Lift-off Resist Processes for Insulator Films

    The bi-layer lift-off method has been used successfully to commercially fabricate many structures including source, drain ohmic contacts, gates and air bridges for use in Gallium Arsenide (GaAs), GaN, InP, MEMS and other semiconductor devices. It is widely adopted for common pattern metallization processes.

  • News
    27 May 2020

    Staying COVID-19 Secure in 2020

    A-Gas EM confirm that we have complied with the government’s guidance on managing the risk of COVID-19