KMG Electronic Chemical’s Performance Products Group offers a broad range of products and services required to achieve specific application criteria in semiconductor manufacturing. The increasingly finer line geometries required of semiconductor fabs worldwide make the precision manufacturing and blending of custom performance process chemicals more critical than ever.
In order to meet these critical needs, KMG Electronic Chemicals offers:
- Temperature-controlled manufacturing, storage, transportation and delivery
- Premixed products manufactured to exacting specifications
- Statistical process control of assay
KMG Electronic Chemical ensures the consistency of etchants and mixes through stringent mixing procedures, sampling protocol and control of trace metals.
The Performance Products Group will manufacture to your custom specifications or we can provide our own products recommended for such applications.
What sets KMG’s Performance Products Group apart is quality. Each product is mixed in a cleanroom environment, filtered and particle counted, and packaged in containers specially designed and manufactured for us to preserve the integrity of the chemicals you purchase.
Aluminum Etch allows for the controlled removal of excess aluminum, leaving a well-defined pattern of aluminum wiring.
Aluminium Etchant - VLSI
Ammonium Fluoride 40%
Ammonium fluoride is a buffer used in buffered oxide etchants. It keeps the etch rate on silicon oxide constant, as well as prevents HF from penetrating photoresist.
Ammonium Fluoride 40% w/v - VLSI
Buffered Oxide Etch
Buffered Oxide Etch is used for semiconductor patterning in silicon dioxide and cleaning applications.
Contact Etch 10:1 - VLSI
Contact Etch 20:1 - VLSI
Lodyne Silicon Dioxide Etch 5:1 - VLSI
Lodyne Silicon Dioxide Etch 7:1 - VLSI
Lodyne Silicon Dioxide Etch 10:1 - VLSI
Lodyne Silicon Dioxide Etch 20:1 - VLSI
Lodyne Silicon Dioxide Etch 5:1 MH - VLSI
Silicon Dioxide Etch 7:1 - VLSI
Silicon Dioxide Etch 10:1 - ULSI
Silicon Dioxide Etch 10:1 - VLSI
Hydrogen peroxide is used in SC-1 and SC-2 solutions to remove particles from silicon wafers and to remove surface metallic contamination. The purity of the hydrogen peroxide is critical to surface roughness and metallic residual levels on the wafer.
Hydrogen Peroxide 31% - VLSI
Indium Tin Oxide Etch
Indium Tin Oxide (ITO) has optical transparency and good electrical conductivity. ITO is used in flat panel displays for camera, television, and smart phones.
Indium Tin Oxide Etch LCE 10 - VLSI
Mixed Acid Etchant
Mixed Acid Etchant (MAE®) consists of volume ratios of Nitric Acid, Hydrofluoric Acid and Acetic Acid. Mixed Acid Etchants are widely used to etch silicon substrates and polysilicon films.
Silcant Etchant 5:2:2 - VLSI