PMGI SF / LOR A / LOR B / LOR C

Resists for Bi-layer Lift-off Processing

Material Attributes:

  • Won't intermix when over-coated with most imaging resists
  • High thermal stability: Tg ~ 195oC
  • Single step development of bi-layer stack in TMAH or KOH developers
  • Removes quickly and cleanly in conventional resist strippers
  • Enables sub 0.25µm micron bi-layer resist imaging
  • Enables high yield, very thick (>3µm) metal lift-off processing


Applications:

  • Data Storage
  • III-V Semiconductors
  • Optoelectronics

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  • KAM-LOR-PMGI-Datasheet-51820.pdf
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UniLOR N

UniLORTM N is a negative-tone, chemically amplified
proprietary co-polymer resist for use in UV lithography
processing of semiconductors, MEMS and
other nanofabricated structures. It is available in
three standard viscosities and provides wall profile
adjustability and high thermal stability across film
thicknesses ranging from 1 to 5 μm in a single coat.
Ideally suited for lift-off applications, it is easily
removable and compatible with a range of TMAH
developers.

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  • KAM UniLOR N Datasheet 7.13.22 final.pdf
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