Lift-off Resists
    Metal Deposition Processing

    Material Attributes:

    • Won't intermix when over-coated with most imaging resists
    • High thermal stability: Tg ~ 195oC
    • Single step development of bi-layer stack in TMAH or KOH developers
    • Removes quickly and cleanly in conventional resist strippers
    • Enables sub 0.25µm micron bi-layer resist imaging
    • Enables high yield, very thick (>3µm) metal lift-off processing


    • Data strage
    • III-V Semiconductors
    • Optoelectronics