Lift-off Resists
Metal Deposition Processing

Material Attributes:

• Won't intermix when over-coated with most imaging resists
• High thermal stability: Tg ~ 195^oC
• Single step development of bi-layer stack in TMAH or KOH developers
• Removes quickly and cleanly in conventional resist strippers
• Enables sub 0.25µm micron bi-layer resist imaging
• Enables high yield, very thick (>3µm) metal lift-off processing

Applications:

• Data strage
• III-V Semiconductors
• Optoelectronics