High contrast, epoxy-based negative photoresists capable of 4-110 µm in a single coat step and
developable in a conventional aqueous alkaline developer (TMAH). KMPR® 1000 has excellent
adhesion to metals and high chemical and plasma resistance, making it ideal for many MEMS,
Electrolytic Plating and DRIE applications.

Features
• High aspect ratio imaging
• Vertical sidewalls
• Greater than 100 µm film thickness in a single coat
• Aqueous developer compatible (TMAH & KOH)
• Wet stripping in conventional strippers
• Excellent dry etch resistance

High contrast, epoxy-based negative photoresists capable of 0.5 - >200 µm in a single coat step.
Cured films or microstructures are very resistant to solvents, acids and bases and have excellent
thermal and mechanical stability, making them well suited for fabricating permanent structures
such as pixel walls, fluidic channels and nozzles, micro arrays and spacers.

KMSF® 1000 is a negative tone, polyimide-based photo-dielectric for use as an ultra-low stress
buffer, passivation or protective layer.

KMSF® 2000 is a negative-tone, low-temperature cure, PPE-copolymer-based photo-dielectric for
high reliability heterogeneous design in advanced packaging.

PermiNex® 1000 and 2000 resists are epoxy-based, photo-imageable bonding resist used as an
adhesive layer for the definition and capping of cavity structures such as BAW, SAW, microfluidic
devices, and others, where critical alignment, low temperature processing and high bond quality
are desired.

Ma-N 400 is a negative tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities.  - well suitable as an etch mask exhibiting high dry and wet etch resistance - excellent for pattern transfer with PVD and lift-off processes - excellent electroplating characteristics (high stability in acid and alkaline plating baths) - good thermal stability of the resist patterns - aqueous alkaline development.

Negative Tone Photoresists - Conventional Pattern Transfer and Single-Layer Lift-Off.

Ma-N 1400 is a negative tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities.  - well suitable as an etch mask exhibiting high dry and wet etch resistance - excellent for pattern transfer with PVD and lift-off processes - high thermal stability of the resist patterns - aqueous alkaline development.

 Negative Tone Resists.

UVN30 is a negative-tone photoresist for DUV, X-ray, and e-beam applications. This resist is targeted for fast throughput device production rules down to 150 nm. Nested lines/spaces, isolated lines, posts, and contacts can be resolved with wide process windows. Minimal PEB sensitivity, insensitivity to airborne contaminants, and superior metal etch resistance are only some of the properties UVN30 offers. Recommended substrates include polysilicon, 300Å capped SiON, and Rohm and Haas Electronic Materials’ organic anti-reflection coating. UVN30 has been optimized for 0.26N developers.

UniLORTM N is a negative-tone, chemically amplified proprietary co-polymer resist for use in UV lithography processing of semiconductors, MEMS and other nanofabricated structures. It is available in three standard viscosities and provides wall profile adjustability and high thermal stability across film thicknesses ranging from 1 to 5 μm in a single coat. Ideally suited for lift-off applications, it is easily removable and compatible with a range of TMAH developers.

TempKoat™ N is a chemically amplified, negative-tone, temporary resist formulated for advanced packaging and MEMS applications. Specifically, TempKoat™ N is capable of producing high-aspect
ratio features with minimal processing time. The unique combination of fast photospeed and high
resolution, while maintaining excellent chemical resistance and residue-free removal, make it ideal for state-of-the-art advanced packaging. TempKoat™ N 15 is the first dilution available in the TempKoat™ N series.*

UVN™ 2300 resist is a negative, low-temperature KrF photoresist for mid-implant and/or Cell open applications.