Negative

  • KMPR® 1000

    High contrast, epoxy-based negative photoresists capable of 4-110 µm in a single coat step and
    developable in a conventional aqueous alkaline developer (TMAH). KMPR® 1000 has excellent
    adhesion to metals and high chemical and plasma resistance, making it ideal for many MEMS,
    Electrolytic Plating and DRIE applications.

  • SU-8 Resists

    High contrast, epoxy-based negative photoresists capable of 0.5 - >200 µm in a single coat step.
    Cured films or microstructures are very resistant to solvents, acids and bases and have excellent
    thermal and mechanical stability, making them well suited for fabricating permanent structures
    such as pixel walls, fluidic channels and nozzles, micro arrays and spacers.

  • KMSF® 1000

    KMSF® 1000 is a negative tone, polyimide-based photo-dielectric for use as an ultra-low stress
    buffer, passivation or protective layer.

  • PermiNex® 1000 & 2000

    PermiNex® 1000 and 2000 resists are epoxy-based, photo-imageable bonding resist used as an
    adhesive layer for the definition and capping of cavity structures such as BAW, SAW, microfluidic
    devices, and others, where critical alignment, low temperature processing and high bond quality
    are desired.

  • ma-N 400

    Ma-N 400 is a negative tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities.  - well suitable as an etch mask exhibiting high dry and wet etch resistance - excellent for pattern transfer with PVD and lift-off processes - excellent electroplating characteristics (high stability in acid and alkaline plating baths) - good thermal stability of the resist patterns - aqueous alkaline development.

     

  • ma-N 400 & 1400

    Negative Tone Photoresists - Conventional Pattern Transfer and Single-Layer Lift-Off.

  • ma-N 1400

    Ma-N 1400 is a negative tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities.  - well suitable as an etch mask exhibiting high dry and wet etch resistance - excellent for pattern transfer with PVD and lift-off processes - high thermal stability of the resist patterns - aqueous alkaline development.

  • ma-N resists

     Negative Tone Resists.

  • UVN30

    UVN30 is a negative-tone photoresist for DUV, X-ray, and e-beam applications. This resist is targeted for fast throughput device production rules down to 150 nm. Nested lines/spaces, isolated lines, posts, and contacts can be resolved with wide process windows. Minimal PEB sensitivity, insensitivity to airborne contaminants, and superior metal etch resistance are only some of the properties UVN30 offers. Recommended substrates include polysilicon, 300Å capped SiON, and Rohm and Haas Electronic Materials’ organic anti-reflection coating. UVN30 has been optimized for 0.26N developers.