Negative

  • KMPR

    Chemically Amplified Epoxy-based Negative Photoresist capable of 1-100um in a single-spin @ 3000rpm.

  • SU-8

    Chemically Amplified Epoxy-based Negative Photoresist capable of 1-100um in a single-spin @ 3000rpm.
     

  • ma-N 400

    Ma-N 400 is a negative tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities.  - well suitable as an etch mask exhibiting high dry and wet etch resistance - excellent for pattern transfer with PVD and lift-off processes - excellent electroplating characteristics (high stability in acid and alkaline plating baths) - good thermal stability of the resist patterns - aqueous alkaline development.

     

  • ma-N 400 & 1400

    Negative Tone Photoresists - Conventional Pattern Transfer and Single-Layer Lift-Off.

  • ma-N 1400

    Ma-N 1400 is a negative tone photoresist series designed for the use in microelectronics and microsystems technology. The resists are available in a variety of viscosities.  - well suitable as an etch mask exhibiting high dry and wet etch resistance - excellent for pattern transfer with PVD and lift-off processes - high thermal stability of the resist patterns - aqueous alkaline development.

  • ma-N resists

     Negative Tone Resists.

  • UVN30

    UVN30 is a negative-tone photoresist for DUV, X-ray, and e-beam applications. This resist is targeted for fast throughput device production rules down to 150 nm. Nested lines/spaces, isolated lines, posts, and contacts can be resolved with wide process windows. Minimal PEB sensitivity, insensitivity to airborne contaminants, and superior metal etch resistance are only some of the properties UVN30 offers. Recommended substrates include polysilicon, 300Å capped SiON, and Rohm and Haas Electronic Materials’ organic anti-reflection coating. UVN30 has been optimized for 0.26N developers.