CYCLOTENE* advanced electronics resins from The Dow Chemical Company are high-purity polymer solutions that have been developed for microelectronics applications. The resins are derived from B-staged bisbenzocyclobutene-based (BCB) monomers and are formulated as high-solids, low-viscosity solutions.
Notable properties of the resins include:
- Low dielectric constant
- Low loss at high frequency
- Low moisture absorption
- Low cure temperature
- High degree of planarization
- Low level of ionics
- High optical clarity
- Good thermal stability
- Excellent chemical resistance
- Good compatibility with various metallization systems
- Less than 5% shrinkage during cur
Cyclotene 3000 Series
The CYCLOTENE™ 3000 Series Advanced Electronics Resins derived from B-staged bisbenzocyclobutene (BCB) monomers are dry-etch grades of the CYCLOTENE family of products and were developed for use as spin-on dielectric materials in microElectronics device fabrication. The CYCLOTENE Resins are low dielectric constant and low dielectric loss materials and feature low moisture absorption, no out-gassing, low-temperature cure and excellent planarization. The CYCLOTENE Resins have been widely adopted in a variety of Electronics applications, including silicon and compound semiconductor passivation, interlayer dielectric, flat panel displays, IC packaging, integrated passives, MEMS, wafer bonding and 3D integration, and optoelectronic components. There are four formulations of the CYCLOTENE 3000 Series products which are commercially available from A-Gas EM. An additional dry etch product, XUS 35077.00 type 02, was designed for flat panel display applications.
Please contact Dave.Shaw@agas.com for further information on that product.
Cyclotene 4000 Series (Double puddle processing)
The CYCLOTENE™ 4000 Series Advanced Electronics Resins are I-line-, G-line-, and broad band-sensitive photopolymers that have been developed for use as dielectrics in thin film microElectronicss applications. These polymers are derived from B-staged bisbenzocyclobutene (BCB) chemistry and have final film properties that are similar to the dry etchable 3000 series. Products are listed in Table 1. Note that, for the thicker and thinner XUS products, the DS2100 develop process described in this guide is possible but immersion develop with D3000 is preferred. Please see our related immersion develop processing guide for more details on this process. Properties of CYCLOTENE Resins are shown in Tables 2-4 and Figure 1. Additional information on CYCLOTENE Resins can be found on the web site, www.cyclotene.com
Cyclotene 4000 Series (Immersion processing)
The CYCLOTENE™ 4000 Series Advanced Electronics Resins are I-line-, G-line-, and broad band-sensitive photopolymers that have been developed for use as dielectrics in thin film microElectronicss applications. These polymers are derived from B-staged bisbenzocyclobutene (BCB) chemistry and have final film properties that are similar to the dry etchable 3000 series. Additional information on CYCLOTENE Resins can be found on the web site, www.cyclotene.com.
CYCLOTENE 6505 provides the 3D packaging customers with multistack, high resolution dielectric material with excellent film adhesion and low cure temperature via BCB and epoxy hybrid chemistries, differentiating from PBO and PI dielectrics with no outgasing during cure, good Cu-migration performance and superior chemical resistance. Key Features Positive Tone & Aqueous Base Developable Low temperature curable 190-210°C Good thermal stability with no outgassing Improved Lithographic Performance Excellent adhesion on widely used substrates Good Cu drift performance Resistant to chemical attack by solvents and removers for packaging Multilayer stack build capable
Cyclotene XUS 35077
CYCLOTENE™ XUS 35077.00 Type 02 (BCB) Advanced Electronics Resin is a resin formulation designed for dielectric and planarization applications which require excellent gap fill and planarization while delivering an isotropic low dielectric constant. When properly applied, BCB films can reliably replace PECVD silicon nitride (SiNx) passivation on back channel etch TFT designs facilitating production cost reduction and higher throughput. When properly cured, a 3μm BCB film has equivalent transparency to a 0.25μm SiNx film. The low dielectric constant of BCB films (ε = 2.65) compared to SiNx (ε = 7-9) facilitating significant reductions in capacitive coupling between pixel electrodes and metal business, improving picture quality and increasing aperture ratio. The high level of planarization provided by BCB films reduces disclinations at the pixel edge and improves the reproducibility of the alignment layer rubbing process. This application note describes general coating, curing, and etching conditions for CYCLOTENE XUS 35077.00 Resin.