UV135 is an advanced gate resist for use across multiple pitches using a binary mask.
■ Low iso-dense bias
■ Maximum isolated film retention to <110 nm
■ Compatible with PSM and OPC assist features to enlarge process windows
UV210 is a multipurpose resist that can be utilised for gate, phase shift mask contact holes and trench applications in the 130 - 180 nm CD range
UV53G is a positive, lightly-dyed, high-temperature KrF photoresist for high-resolution, mid-implant applications. This product features low iso-dense bias and outstanding isolated trench performance.
- Excellent profiles
- Proven oxide wet-etch capability • Low outgassing
- Low defectivity
- PFOS/PFOA, silicon-free
UVIII Positive DUV Photoresist is optimized to provide wide process latitude for <0.250 µm lines/spaces and contact hole applications. The post-exposure delay stability and extended shelf life of UVIII are derived from the high activation energy chemical platform employed. UVIII is compatible with 0.26N developer systems and a wide range of substrates, including silicon, polysilicon, BPSG, and TEOS.
UV5 positive DUV photoresist has been optimized to provide vertical profile imaging of isolated and semi-dense features for device production design rules to 150 nm. This resist is ideally suited for use with AR2™ Anti-reflectant and a variety of inorganic substrates. UV5 offers metal etch resistance equivalent to that of conventional i-Line photoresists. Its minimal sensitivity to PEB temperature variation (3 nm/°C), superior etch resistance, wide process window, and very low bias properties provide high yielding device fabrication. UV5 is compatible with 0.26N developers (2.38% TMAH).
UV1116 is a High Temperature, Positive DUV Consolidation Photoresist suitable for Line/Space, Trench, and CH/Via applications. UV1116 gives excellent resolution across all FEOL & BEOL feature types resulting in large process windows..
UV™60 is a positive DUV photoresist designed for consolidation of implant, metal contact hole, and via applications for 200 nm features.
UVN30 is a negative-tone photoresist for DUV, X-ray, and e-beam applications. This resist is targeted for fast throughput device production rules down to 150 nm. Nested lines/spaces, isolated lines, posts, and contacts can be resolved with wide process windows. Minimal PEB sensitivity, insensitivity to airborne contaminants, and superior metal etch resistance are only some of the properties UVN30 offers. Recommended substrates include polysilicon, 300Å capped SiON, and Rohm and Haas Electronic Materials’ organic anti-reflection coating. UVN30 has been optimized for 0.26N developers.